Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, Original

China Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, Original, Find details about China Ldmos Transistors, RF Power from Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, Original

Model NO.
MRFE6VP61K25HR5
HS Code
8542330000
Model NO.
MRFE6VP61K25HR5
HS Code
8542330000
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
1.8--600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, OriginalMrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, OriginalMrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, Original

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