Fused Silica Wafer Substrate

China Fused Silica Wafer Substrate, Find details about China Quartz Wafer, Glass Wafer from Fused Silica Wafer Substrate

Model NO.
HKQT-879
Trademark
HKQT
Specification
30 2.5
Origin
Donghai
Model NO.
HKQT-879
Trademark
HKQT
Specification
30 2.5
Origin
Donghai
Fused Silica Wafer Substrate
Fused Silica Wafer Substrate
Fused Silica Wafer Substrate
Fused Silica Wafer Substrate
Fused Silica Wafer Substrate

Processing specifications:

Materials: various glass, quartz, sapphire, ceramic, silicon.

Wafer size: 100 - 200 mm in diameter.

Wafer thickness range: 200 μm - 2mm.

Minimum aperture: 30um.

Aperture tolerance: ± 0.02mm.

: <=100μm

Hole depth range: through hole or blind hole.

Hole shape: vertical hole or blind hole.


Wafer size:

4" = Dia. 100mm +/- 0.2mm.

6" = Dia. 150mm +/- 0.2mm.

8" = Dia. 199.7mm or Dia. 200mm +/- 0.2mm.

12" = Dia. 300mm +/- 0.2mm or +/- 0.05mm.


Wafer thickness:

200 +/- 25um

300 +/- 25um

400 +/- 10um

500 +/- 10um

700 +/- 25um


TTV : < 15um

Notch or flat edge: processed by SEMI standard


Customizable processing: square or opposite sex.