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Quartz Carrier for Solar and Semiconductor (GE Material)

China Quartz Carrier for Solar and Semiconductor (GE Material), Find details about China Quartz Boat, Quartz Wafer Carrier from Quartz Carrier for Solar and Semiconductor (GE Material)

Model NO.
B006
Defoamation Point
1120 Degree
Strain Point
1110 Degree
Coefficient of Thermal Expansion
5.6*10-7
Thermal Conductance
1.4
Comressive Strength
1100
Tension Strength
48
Dielectric Constant
3.7
Trademark
Yukang
Transport Package
Wooden Case Outside, Carton Case Inside
Specification
as customer required
Origin
Liangyugang, Jiangsu
Model NO.
B006
Defoamation Point
1120 Degree
Strain Point
1110 Degree
Coefficient of Thermal Expansion
5.6*10-7
Thermal Conductance
1.4
Comressive Strength
1100
Tension Strength
48
Dielectric Constant
3.7
Trademark
Yukang
Transport Package
Wooden Case Outside, Carton Case Inside
Specification
as customer required
Origin
Liangyugang, Jiangsu
Quartz Carrier for Solar and Semiconductor(GE Material)
1. SiO2> 99.99% ,tubing fused quartz 
2.Operating Temperature: 1250ºC
SoftenTemperature: 1730ºC 
3.Excellent visual and chemical performance .
4. without surface coating and infectant.
5. Health care and environmental protection.
6. Any dimension can be made.

Quartz Carrier for Solar and Semiconductor (GE Material)
Quartz Carrier for Solar and Semiconductor (GE Material)

We can offer max 12" quartz boat.
All production can according to your requirement.
 

Chemical composition (ppm)

AL

Fe

K

Na

Li

Ca

Mg

Cu

Mn

Cr

B

Ti

5-12

0.19-1.5

0.71-1.6

0.12-1.76

0.38-0.76

0.17-1.23

0.05-0.5

0.05

0.05

<0.05

<0.1

<1.0

 

Spectral transmission at 1.0mm thickness

mm

<220

255

280

315

350

38

590

780

%

89

91

93

93

93

93

93.2

93.4

Physical Propertie

(g/cc)Density20 °C kg.m-3

2.2

Degree of Hardness Moh's Scale

5.5-5.6

Softening point(degree)

1683

Annealing point

1215

Defoamation Point

1120

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