Lithium Niobate Ln Wafers for Photonics and Optoelectronics

China Lithium Niobate Ln Wafers for Photonics and Optoelectronics, Find details about China Crystal, Optic from Lithium Niobate Ln Wafers for Photonics and Optoelectronics

Port: Beijing, China
Transport Package: Single Piece or 25 PCS
Payment Terms: T/T, Western Union, Paypal
Shipping: FedEx, DHL, UPS...
Specification: 2-6 inch
Trademark: FineWin
Origin: China

Lithium Niobate LN wafers for photonics and optoelectronics

 

LN Wafer (LiNbO3)

LN wafer is an ideal material for versatile applications in the fields of photonics and optoelectronics such as Detectors, Sensors, Phased-array radar and Electro-optic modulators..etc. The single crystal LN thin films will be used for developing wide-bandwidth, high speed and high efficiency electronic devices and photonic circuits.

Single-crystal LN thin film/SiO2 layer/LN substrate

Parameter

Specification

Unit

Grade

Prime

 

Diameter

3

inches

Top LN Layer

Growth method

Ion implantation / Wafer bonding

 

Orientation

<+Z> ± 0.5

degree

Thickness

(300~700) ± 50

nm

Thickness uniformity

 ± 5

%

Surface roughness

< 1

nm

Buried Oxide

Growth method

PECVD

 

Thickness

2000 ± 100

nm

Thickness uniformity

 ± 5

%

Refractive index

1.46 ~ 1.47

 

Handle Wafer

Thickness

0.51 ± 0.05

mm

Orientation

<+Z> ± 0.5

degree

Back side surface

Polished

 

Flat alignment

± 0.1

mm


Packaging 
Lithium Niobate Ln Wafers for Photonics and Optoelectronics
 


Product Pictures:
Lithium Niobate Ln Wafers for Photonics and Optoelectronics
Lithium Niobate Ln Wafers for Photonics and Optoelectronics