Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet

China Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet, Find details about China RF Fet Ldmos, Power Ldmos Transistor from Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet

Model NO.
BLF574XR
Power - Output
600W
Voltage - Rated
110 V
Package / Case
Sot-1214A
Origin
USA
HS Code
8542330000
Model NO.
BLF574XR
Power - Output
600W
Voltage - Rated
110 V
Package / Case
Sot-1214A
Origin
USA
HS Code
8542330000
BLF574XR; BLF574XRS
Power LDMOS transistor
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the
most severe applications without compromising the RF performance.
Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, MosfetBlf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, MosfetBlf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, MosfetBlf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, MosfetBlf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, MosfetBlf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet
7. Test information
7.1 Ruggedness in class-AB operation
The BLF574XR and BLF574XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 600 W pulsed; f = 225 MHz.
Blf574xr, Blf574xrs: RF Power Ldmos Transistor High Frequency, Microwave Tube, NXP Semiconductors, Mosfet

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