Mosfet Transistor Ipw90r500c3 9r500c to- 247

China Mosfet Transistor Ipw90r500c3 9r500c to-247, Find details about China Transistor 9r500c, Transistor Mosfet from Mosfet Transistor Ipw90r500c3 9r500c to-247

Basic Info.

Model NO.

9R500C

Technology

Mosfet

Vds - Drain-Source Breakdown Voltage

900 V

Packaging

Tube

Subcategory

Mosfet

Channel Mode

Enhancement

Specification

standard

Origin

China

Model NO.

9R500C

Technology

Mosfet

Vds - Drain-Source Breakdown Voltage

900 V

Packaging

Tube

Subcategory

Mosfet

Channel Mode

Enhancement

Specification

standard

Origin

China

Product Desciption

Product Attributes

Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 740µA
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Drain to Source Voltage (Vdss)	900V