China Low Price High Temperatuer Nand Flash Memory

China Low Price High Temperatuer Nand Flash Memory, Find details and Price about China Mwd Nand Flash Memory, High Temperature Resistance Nand Flash Memory from China Low Price High Temperatuer Nand Flash Memory

Color
Gold
Function
Storage USB Disk
Security Check
Support Security Check
Trademark
ZITN
Transport Package
Box
Specification
15.5 x 21.6 /2.54 mm
Origin
China.
HS Code
8523511000
Color
Gold
Function
Storage USB Disk
Security Check
Support Security Check
Trademark
ZITN
Transport Package
Box
Specification
15.5 x 21.6 /2.54 mm
Origin
China.
HS Code
8523511000

China Low Price High Temperatuer Nand Flash Memory

Product Description

China Low Price High Temperatuer Nand Flash Memory
High Temperature Resistance NAND-Flash Memory
LDMF1GA /4GA


The chip is high-temperature NAND-Flash memory, with fast reading and writing, high reliability, excellent performance characteristics under both of high and low temperature. It can Operate in -45 ºC ~ 175 ºC in harsh environment for Long-term.

Operating temperature: -45ºC ~ +175ºC
The highest operating current: 90mA
Standby current: <2ma
Operating Voltage Range(Vcc): 2.7 V ~ 3.6 V
Input High level (V): 0.8Vcc ~ Vcc+0.3
Input Low level (V): -0.3 ~ 0.2Vcc
Output High level (V): 2.4 ~ Vcc
Output Low level (V): -0.3 ~ 0.4
High temperature data hold time: ≥500h
Operating life: ≥2000h
Read/write Rate: 2.8 ms/page read 2.15ms/page write
Package: 16 PIN DIP PB-Free Package

 

Product Parameters

China Low Price High Temperatuer Nand Flash Memory
China Low Price High Temperatuer Nand Flash Memory

Pin Description:

PINFunctional description
IO0 ~ IO7Multiplexed input / output
The bidirectional I/Os transfer address, data, and command information.
When C(-)E(-) pin is high,the I/Os is High impedance.
CLECommand Latch Enable
When CLE is high, the command is latched into the command register through the IO port on the rising edge of the signal.
ALEAddress Latch Enable
When ALE is high,the address is latched into the address register through the IO port on the rising edge of the signal.
C(-)E(-)Chip Enable
Enables or disables the chip.
R(-)E(-)Read Enable
Control the output of serial data. When the signal is low, the data is driven to the IO port. Data is valid after tREA time on the falling edge of R(-)E(-), and the internal column address counter is incremented automatically.
W(-)E(-)Write Enable
Control the input of serial data,command, address and data is latched on the W(-)E(-) Rising edge.
R/B(-)Ready/Busy output
Indicates the device operating state. When low, indicates that programming, erase, or random read operation is in progress, when high, indicates that no operation or operation is finished. It is recommended to connect a pull-up resistor (4.7K~10K) to the pin.
VccPower Supply
VssGND
Addressing cycle:

LDMF1GA:
AddressingIO 0IO 1IO 2IO 3IO 4IO 5IO 6IO 7 
1st cycleCA0CA1CA2CA3CA4CA5CA6CA7Column Address 1
2nd cycleCA8CA9CA10CA110000Column address 2
3rd cyclePA0PA1PA2PA3PA4PA5PA6BA7Row address 1
4th cycleBA8BA9BA10BA11BA12BA13BA14BA15Row address 2
5th cycleBA16BA17BA1800000Row address 3
Notes: 1. CAx = column address, PAx = page address, BAx = block address ,the page address, block address called the row address. Byte address of page called column address
Page size x8: 8640 bytes (2048 + 64 bytes)
Block size: 128 pages (1024K + 8K bytes)
Block number: 4096 blocks

LDMF4GA:
AddressingIO 0IO 1IO 2IO 3IO 4IO 5IO 6IO 7 
1st cycleCA0CA1CA2CA3CA4CA5CA6CA7Column Address 1
2nd cycleCA8CA9CA10CA11CA12CA1300Column address 2
3rd cyclePA0PA1PA2PA3PA4PA5PA6BA7Row address 1
4th cycleBA8BA9BA10BA11BA12BA13BA14BA15Row address 2
5th cycleBA16BA17BA1800000Row address 3
Notes: 1. CAx = column address, PAx = page address, BAx = block address ,the page address, block address called the row address. Byte address of page called column address
Page size x8: 8640 bytes (8192 + 448 bytes)
Block size: 128 pages (1024K + 56K bytes)
Block number: 4096 blocks

Instruction List:
Function1st cycle2nd cycle
ResetFFh-
Read00h30h
Page program80h10h
Block erase60hD0h

Invalid block management
All locations of the device are erased (0xFF) except the address location in invalid block when shipped from the factory. The invalid block flag is located on the first byte of the spare area on the last page of the block. Invalid block data is non-0xFF. The system must establish invalid block management to avoid using invalid block. The start address of the first block is 0000h, which is guaranteed to be valid shipped from the factory.
The bad block table is created by the following flowchart (below).


Operating Steps:
1. An error occurred on page n of block A during erasing or programming operation.Copy the data from the first page to the (n-1) -th page of block A to the same position in the other empty block B.Copy the buffer data need to be saved to the n-th page position of block B.Add block A to the Bad block table.
  1. Command latch cycle
  2. Address latch cycle sequence
  3. The input data latches cycle sequence
  4. Output data latches cycle sequence
  5. System instructions
Read operation:
Read operation is implemented by writing 00h-30h command to the command register. First, write 00h command, then, write the address with 5 cycles, last, write 30h command. After completion, the R/B(-) is released. the user determine the completion of the internal data transmission by detecting the status of R/B(-). Once the completion of the transmission, the user can start the RE, the data read out continuously.
Read operation sequence is as follows.


Programming operation:
Before programming operation, user must erase the block firstly. Programming operation is implemented by writing 80h-10h command to the command register. First write 80h command, then, write the address with 5 cycles, and then load the data into the internal data buffer register, last, write 10h after the completion of the command to confirm Write. After programming completion, the R/B(-) is released.
Programming operation sequence


Erase operation:
The erase operation command is 60h-D0h. First write 60h command, then write the address with 3 cycles , and then write D0h command to confirm the erase. After the completion of erasing, R/B(-) is released.

Erase operation sequence

Reset operationReset operation sequence

Note: If the write data to the page before operation to complete restoration command input, may cause data corruption, the damage is not only is page programming, can also affect the adjacent pages.

Sequential instructions(-45ºC~175ºC):As the temperature increases, the response speed of the device after operation can slow down.User program execution sequence a certain amount of allowance, suggest to increase the high temperature stability.

Timing parameter list(25ºC):
SymbolMINStandardMAXUnitsDscription
tPROG 0.83msPage program time
tBERS 1.510msBlock erasure time
tCLS15  ns 
tCLH5  ns 
tCS20  ns 
tCH5  ns 
tWP15  ns 
tALS15  ns 
tALH5  ns 
tDS15  ns 
tDH5  ns 
tWC30  ns 
tWH10  ns 
tADL70  ns 
tR  60μs 
tAR10  ns 
tCLR10  ns 
tRR20  ns 
tRP15  ns 
tWB  100ns 
tRC30  ns 
tREA  20ns 
tCEA  25ns 
tRHZ  100ns 
tCHZ  30ns 
tCSD10  ns 
tRHOH15  ns 
tRLOH5  ns 
tCOH15  ns 
tREH10  ns 
tIR0  ns 
tRHW100  ns 
tWHR60  ns 
tRST  5/10/500μsRead/programming/erasing
 
China Low Price High Temperatuer Nand Flash Memory
China Low Price High Temperatuer Nand Flash Memory

Company Profile

ZITN is a national high-tech enterprise, it was established in 2002 by many high tech engineers who have vast experience in microelectronic Industry. With 19 years' development, ZITN became a recognized industry leader in China, and we have total 175 employees, more than 49% of them are from . We mainly design, develop and manufacture high accuracy inclinometer, quartz based accelerometers, inertial measurement unit systems, IF Circuit products and Nand flash memory which widely used for aerospace, oil and gas drilling, geological exploration fields.
China Low Price High Temperatuer Nand Flash Memory

 

Our Advantages

a. Experience in the hybrid thick film IC &high end sensors development and manufacture fields more than 19 years.
b. Invention patents more than 40 projects.
c. Scientific institution, production base more than 20000 square meters.
d. More than 49% of employees are from R&D team.
e. New cooperating customers more than1000 in recently 3 years.
f. Production capacity more than 100000/year;
g. Professional pre-sales, after-sales guide, solutions can be provided based on customers inquiries.
h. .



Miniature volume ! Independent creative technology!
From the servo-circuit production to assmble the sensors at one-stop .


China Low Price High Temperatuer Nand Flash Memory

Packaging & Shipping

Customized anti-static box.
Delivery via express (DHL, Fedex, TNT, UPS etc...)
Delivery date within 7-10 days after the shipment from our factory.

China Low Price High Temperatuer Nand Flash Memory

 

FAQ

What kind of service can you provide?
Except the stanadrd model, we also can provide the products accorded with customers' detailed requirments, such as calibration, repair, upgrade etc...


What kind of test of the product will be done before leave your factory?
We have a strict quality control system to guarantee the product performance, such as Non-magnetic turntable calibration system, Shock&Vibration test system, temperature cycle test system etc...


Can I get a sample for evaluation?
Yes, we're willing to provide the sample for evaluation and guide you for any techical questions in the whole process.

What's the delivery options can I choose?
We can provide the airline express delivery service , such as DHL/Fedex/TNT express, normally 7- 10 days for transportation needed.

Can I visit your company if I'm interested?
Yes, our company locate at Qingdao city, we have over 175 employees here, included the R&D, production, Financial, Marketing, etc...



China Low Price High Temperatuer Nand Flash Memory