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Optical Germanium B270 K9 Bk7 Silicon Quatz 1'~8" Wafer

China Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer, Find details about China Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8, B270 K9 Bk7 Silicon Quatz 1′~8" Wafer from Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer

Model NO.
D5~D300mm
Certification
RoHS, ISO9001
Customized
Customized
Coating
UV
Trademark
ICC
Transport Package
Wrapped in Silk Paper
Origin
Qinhuangdao China
HS Code
9001909090
Model NO.
D5~D300mm
Certification
RoHS, ISO9001
Customized
Customized
Coating
UV
Trademark
ICC
Transport Package
Wrapped in Silk Paper
Origin
Qinhuangdao China
HS Code
9001909090

Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer
Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer
Qinhunangdao Intrinsic Crystal Technology Co., Ltd  provides germanium wafer ( Ge wafer ) to micro- electronics and optoelectronics industry in diameter range from 2" to 4" with EPD< 5000 cm-2 and epi ready surface . Substrate are supplied as per SEMI standards , but non- standard thickness and finish are also available ,  depending on your particular application requirement . Germanium wafer is an excellent semiconductor material and suitable for many thin film and device applications. We can offer both electronics grade and IR grade Ge wafer to meet your unique requirement . Contact us for further product information
Ge Wafer Features :
Ge Wafer Features :
IR optics 
Solar cell application 
Optical fiber production 
Semiconductor and electronics device 
                                                                          
 
Standard Specifications
Growth method
Czochralski
Diameter ( mm )

50.8

76.2
100
Thickness ( um )
500
500
525
Conductivity type
P - type or N - type
Dopant available
Antimony , Gallium , Undoped
Orientation
<100> , <111> , <110> , or others
Off orientation
From 2° to 10° off
Resistivity range

N - type : <=0.4 ohm-cm 
P - type : 0.005 ~ 30 ohm-cm 
Undoped : >=30 ohm-cm

Surface finish
One side or two sides polished
EPD ( cm-2 )
<= 5000
Package method
Single wafer container with outer foil bag
Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer
Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer
optical glass wafer

Specification

Measurement

MaterialCorning 7980
Diameter100mm (+/- 0.1mm)
Thickness0.5mm (+/- 0.05mm)
Bow20µm
Warp25µm
TTV≤ 2µm
Surface Roughness≤ 10 Å rms
Parallelism < 2 arc seconds
Surface Quality40-20 (both sides)
Clear Aperture85% central
Bevelsc-shape
SEMI Notchnone
SEMI Flatnone

Optical Germanium B270 K9 Bk7 Silicon Quatz 1′~8" Wafer

Specification

Measurement

MaterialCorning 7980
Diameter100mm (+/- 0.1mm)
Thickness1mm (+/- 0.05mm)
Bow10µm
Warp15µm
TTV≤ 2µm
Surface Roughness≤ 10 Å rms
Parallelism < 2 arc seconds
Surface Quality40-20 (both sides)
Clear Aperture85% central
Bevelsc-shape
SEMI Notchnone
SEMI Flatnone

Specification

Measurement

MaterialBOROFLOAT®
Diameter100mm (+/- 0.1mm)
Thickness0.5mm (+/- 0.05mm)
Bow20µm
Warp25µm
TTV≤ 2µm
Surface Roughness≤ 12 Å rms
Parallelism < 2 arc seconds
Surface Quality40-20 (both sides)
Clear Aperture85% central
Bevelsc-shape
SEMI Notchnone
SEMI Flatnone
 
                                                                              

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