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1000um Ingaas Pin Photodiode for Power Meter

China 1000um Ingaas Pin Photodiode for Power Meter, Find details about China Photodiode, 1000um from 1000um Ingaas Pin Photodiode for Power Meter

Texture
Plastic or Metal
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Origin
China
Texture
Plastic or Metal
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Origin
China

 

 

InGaAs Photodiode For Instrumentation or Power Meter

Feature

Measure Range

R00:-70 ~ +6 dBm

R04:-66 ~ +10 dBm

R10:-60 ~ +16 dBm

R14:-56 ~ +20 dBm

R20:-50 ~ +26 dBm

R24:-46 ~ +30 dBm

............

Photosensitive Surface

 

A03:300μm

A05:500μm

A10:1000μm

A20:2000μm

 

.........

Applications

 Power Meter

 

Electrical and optical characteristics (PO=10mW, TC=+25°C )

Parameter

Symbol

Min.

Typ.

 Max.

Unit

Test Condition 

Wavelength Range

λ

850

-

1700

nm

-

Power Range

P

-70

-

6

dBm

Vop=5V

-60

 

16

-50

 

26

-40

 

36

Dark Current

Id

-

-

2

 nA

300μm

5

1000μm

10

2000μm

Responsivity

R

-70

0.85

-

A/W

λ=1310 nm

-60

0.083

-

-50

0.012

-

-40

0.001

-

Accuracy

-

-

-

±0.1

dB

-

Capacitance

Ct

-

-

25

Pf

-

Response Time

Tr

-

-

10

ns

-


1000um Ingaas Pin Photodiode for Power Meter









 

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