Products

1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode

China 1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode, Find details about China Photodiode, 1000um from 1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode

Model NO.
1mm/2mm/3mm
Texture
Plastic or Metal
Chip Type
Ingaas Pin
System
Analog
Application System
FTTH
Photosurface
300um/1000um/2000um/3000um
Brand
Wuhan Shengshi Optical
Warranty
12 Months
Payment
Tt/PP
Detecting Wavelength
800nm-1700nm
Product Name
Photo Detector
Supplier Type
Original Manufacturer
Brand Name
Shengshi Optical
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Origin
China
Model NO.
1mm/2mm/3mm
Texture
Plastic or Metal
Chip Type
Ingaas Pin
System
Analog
Application System
FTTH
Photosurface
300um/1000um/2000um/3000um
Brand
Wuhan Shengshi Optical
Warranty
12 Months
Payment
Tt/PP
Detecting Wavelength
800nm-1700nm
Product Name
Photo Detector
Supplier Type
Original Manufacturer
Brand Name
Shengshi Optical
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Origin
China

 

 

1000um/1mm Small dark current  Photodiode Lager photo diode High reliability for Instrumentation receiver IngaAs Photodiode

 

 

Features

For instrumentation 2000um InGaAs PD/ Photodiode

Small dark current

High reliability

High Accuracy

 

Absolute Maximum Ratings

           Parameter

Symbol

 Ratings

Unit 

Storage Temperature

Tstg

-40~+100

ºC

Operating Temperature

 Top

-40~+85

ºC

Operating Voltage

 Vop

5

 V

PD Reverse Voltage

VR(PD)

25

V

Soldering Temp

-

260

ºC

Soldering Time

-

10

S

 

Optical & Electrical Characteristics

Parameter

Symbol

Min.

Typ.

 Max.

Unit

Test Condition 

Wavelength Range

λ

850

-

1700

nm

-

Power Range

P

-70

-

6

dBm

Vop=5V

-60

 

16

-50

 

26

-40

 

36

Dark Current

Id

-

-

2

 nA

300μm

5

1000μm

10

2000μm

Responsivity

R

-70

0.85

-

A/W

λ=1310 nm

-60

0.083

-

-50

0.012

-

-40

0.001

-

Accuracy

-

-

-

±0.1

dB

-

Capacitance

Ct

-

-

25

Pf

-

Response Time

Tr

-

-

10

ns

-

 


1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode
1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode
1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode1000um/1mm Small  Dark  Current Photodiode Lager Photo Diode High  Reliability for Instrumentation Receiver Ingaas Photodiode







 

You Might Also Like