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120MW 1310nm Pulse Laser High Power for OTDR System
120MW 1310nm Pulse Laser High Power for OTDR System

120MW 1310nm Pulse Laser High Power for OTDR System

China 120MW 1310nm Pulse Laser High Power for OTDR System, Find details about China Laser Diode, OTDR from 120MW 1310nm Pulse Laser High Power for OTDR System

Model NO.
PLD-F312-XXXP120
Bandwidth
2.5GB/S 4.3GB/S 6GB/S
Connector
FC/APC FC/Upc Sc/APC SC/PC LC/Upc
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Specification
0.5m/1m FC/APC SC/APC
Origin
China
Model NO.
PLD-F312-XXXP120
Bandwidth
2.5GB/S 4.3GB/S 6GB/S
Connector
FC/APC FC/Upc Sc/APC SC/PC LC/Upc
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Specification
0.5m/1m FC/APC SC/APC
Origin
China


1310nm Pulse Laser For OTDR

Features

  • High output power Pf =120mW @ IFP = 750mA
  • Long wavelength λc = 1310 nm
  • Built-in/out monitor PD
  • Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%

Applications
  • OTDR System


Absolute Maximum Ratings
ParameterSymbolMin.Max.Unit
Pulsed Forward Current*1IFP 1000mA
Reverse VoltageVR 2V
Reverse Voltage (monitor PD)VRM 10V
Reverse Current (monitor PD)IFPM 2mA
Operating Case TemperatureTC060ºC
Storage TemperatureTstg-4085ºC
Lead Soldering TemperatureTsld 260(10s)ºC
Relative Humidity (noncondensing)RH 85%

ParameterSymbolMin.Typ.Max.UnitNotes
Forward VoltageVFP  3.5VIFP = 750 mA, PW = 10 μs, Duty = 1%
Threshold CurrentIth  25mA 
Optical Output Power From SM FiberPf 120 mWIFP =750 mA, PW = 10 μs, Duty = 1%
Center Wavelengthλc129013101330nmPW = 10 μs, Duty = 1%
Spectral Width σ  6nmRMS (−3 dB)
Rise Time tr 0.51.0ns20-80%
Fall Time tf 0.51.0ns80-20%
Monitor Current Im0.05 2mAVRM = 2 V

Optical & Electrical Characteristics
120MW 1310nm Pulse Laser High Power for OTDR System

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