China 4A 800V N-Channel Enhancement Mode Power Mosfet F4n80 to-220f, Find details about China Mosfet, Power Mosfet from 4A 800V N-Channel Enhancement Mode Power Mosfet F4n80 to-220f
PARAMETER | SYMBOL | VALUE | UNIT | ||
4N80/I4N80/E4N80 | F4N80 | ||||
Drian-Source Voltage | VDSS | 800 | V | ||
Gate-to-Source Voltage | VGSS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 4 | A | ||
(T=100ºC) | 2.5 | A | |||
Drain Current(Pulsed) | IDM | 16 | A | ||
Single Pulse Avalanche Energy | EAS | 460 | mJ | ||
Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
TC=25ºC | Ptot | 75 | 30 | W | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
ESD improved capability |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
LED power switch circuit |
Electronic ballast |
Electronic transformer |
Switch mode power supply |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
4N80 | TO-220C | 4N80 | Pb-free | Tube | 1000/box |
F4N80 | TO-220F | F4N80 | Pb-free | Tube | 1000/box |
I4N80 | TO-262 | I4N80 | Pb-free | Tube | 1000/box |
E4N80 | TO-263 | E4N80 | Pb-free | Tape & Reel | 800/box |