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4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to- 220f

China 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f, Find details about China Mosfet, Power Mosfet from 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f

Model NO.
F4N60
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Model NO.
F4N60
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f
PARAMETERSYMBOLVALUEUNIT
4N60/I4N60/E4N60/B4N60/D4N60F4N60 
Drian-Source VoltageVDS600V
Gate-Drain VoltageVGS±30V
Drain Current(continuous)ID(T=25ºC)4A
(T=100ºC)2.5A
Drain Current(Pulsed)IDM16A
Single Pulse Avalanche EnergyEAS250mJ
Peak Diode Recovery dv/dtdv/dt5V/ns
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot7530W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
ESD improved capability
Low ON Resistance(Rdson≤2.5Ω)
Low Gate Charge(Typ: 14.5nC)
Low Reverse Transfer Capacitances(Typ: 4pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
4N60TO-220C4N60Pb-freeTube1000/box
F4N60TO-220FF4N60Pb-freeTube1000/box
B4N60TO-251B4N60Pb-freeTube3000/box
D4N60TO-252D4N60Pb-freeTape & Reel2500/box
I4N60TO-262I4N60Pb-freeTube1000/box
E4N60TO-263E4N60Pb-freeTape & Reel800/box
 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f

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