China 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f, Find details about China Mosfet, Power Mosfet from 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f
PARAMETER | SYMBOL | VALUE | UNIT | |||
20N60 | F20N60 | 20N60D | ||||
Maximum Drian-Source DC Voltage | VDS | 600 | V | |||
Maximum Gate-Drain Voltage | VGS | ±30 | V | |||
Drain Current(continuous) | ID(T=25ºC) | 20 | A | |||
(T=100ºC) | 14 | A | ||||
Drain Current(Pulsed) | IDM | 80 | A | |||
Single Pulse Avalanche Energy | EAS | 1200 | mJ | |||
Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | |||
Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | 3 | W |
TC=25ºC | Ptot | 250 | 85 | 250 | W | |
Junction Temperature | Tj | -55~150 | ºC | |||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
Low ON Resistance(Rdson≤0.45Ω) |
Low Gate Charge(Typ: 61nC) |
Low Reverse Transfer Capacitances(Typ: 20pF) |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Used in various power switching circuit for system miniaturization and higher efficiency. |
Power switch circuit of adaptor and charger. |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
20N60 | TO-220C | 20N60 | Pb-free | Tube | 1000/box |
F20N60 | TO-220F | F20N60 | Pb-free | Tube | 1000/box |
20N60D | TO-3PN | 20N60D | Pb-free | Tube | 600/box |