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4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to- 220f

China 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f, Find details about China Mosfet, Power Mosfet from 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f

Model NO.
F4N65
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Model NO.
F4N65
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f
PARAMETERSYMBOLVALUEUNIT
4N65/I4N65/E4N65/B4N65/D4N65F4N65 
Drian-Source VoltageVDSS650V
Gate-to-Source VoltageVGSS±30V
Drain Current(continuous)ID(T=25ºC)4A
(T=100ºC)2.6A
Drain Current(Pulsed)IDM16A
Single Pulse Avalanche EnergyEAS200mJ
Peak Diode Recovery dv/dtdv/dt5V/ns
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot7530W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
ESD improved capability
Low ON Resistance(Rdson≤2.8Ω)
Low Gate Charge(Typ: 14.5nC)
Low Reverse Transfer Capacitances(Typ: 3.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
4N65TO-220C4N65Pb-freeTube1000/box
F4N65TO-220FF4N65Pb-freeTube1000/box
B4N65TO-251B4N65Pb-freeTube3000/box
D4N65TO-252D4N65Pb-freeTape & Reel2500/box
I4N65TO-262I4N65Pb-freeTube1000/box
E4N65TO-263E4N65Pb-freeTape & Reel800/box
 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f

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