China 7A 800V N-Channel Enhancement Mode Power Mosfet F7n80 to-220f, Find details about China Mosfet, Power Mosfet from 7A 800V N-Channel Enhancement Mode Power Mosfet F7n80 to-220f
PARAMETER | SYMBOL | VALUE | UNIT | ||
7N80/I7N80/E7N80 | F7N80 | ||||
Maximum Drian-Source DC Voltage | VDS | 800 | V | ||
Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 7 | A | ||
(T=100ºC) | 4 | A | |||
Drain Current(Pulsed) | IDM | 28 | A | ||
Single Pulse Avalanche Energy | EAS | 150 | mJ | ||
Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
TC=25ºC | Ptot | 120 | 48 | W | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
LED power switch circuit |
Electronic ballast |
ATX power |
High voltage H bridge PWM motor drive |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
7N80 | TO-220C | 7N80 | Pb-free | Tube | 1000/box |
F7N80 | TO-220F | F7N80 | Pb-free | Tube | 1000/box |
I7N80 | TO-262 | I7N80 | Pb-free | Tube | 1000/box |
E7N80 | TO-263 | E7N80 | Pb-free | Tape & Reel | 800/box |