China 1650c High-Temp Recrystallized Silicon Carbide Tube Rsic Roller, Find details about China Sic Tube, Sic Radiant Tube from 1650c High-Temp Recrystallized Silicon Carbide Tube Rsic Roller
1.Reaction sintering SiC
Chemical Composition
SiC ≥87 %
Dissociative silicon≤12.5%
Dissociative carbon≤0.1%
Others≤0.4%
Item | Unit | Data |
Using temperature | C | 1380 |
Density | g/cm3 | ≥3.02 |
Porosity | % | <0.1 |
Flexural strength | Mpa | 250(20C) |
Mpa | 280(1200C) | |
Modulus of elasticity | Gpa | 330(20C) |
Gpa | 300(1200C) | |
Thermal conductivity | W/m.k | 45(1200C) |
Coefficient of thermal expansion | K-1x10-6 | 4.5 |
Moh's hardness | 13 |
2.
SiC% | Fe2O3 | AI2O3% | Dissociative SI+SIO2% | Dissociative C% |
≥98 | ≤0.5 | ≤0.02 | ≤0.4 | ≤0.3 |
Physical property
Specific weight | 3.2 | Moh's hardness | 9.5-9.8 | Tensile strength | >1.50 | |||
Porosity % | 25~32 |
specific heat Kcal/Kg C | 0 C | 0.148 | rates of radiationλ=0.65μ | 0.87 | ||
average coefficient of linear expansion 10- M/C | 600C | 4.3 | 400C | 0.255 | thermal conductivity Kcal/Mh C | 600C | 14-18 | |
900C | 4.5 | 800C | 0.294 | 1100C | 12- 16 | |||
1200C | 4.8 | 1200C | 0.325 | 1300C | 10-14 | |||
1500C | 5.2 | 1600C | 0.355 |
3.Si3N4 bonded SiC
Si3N4(about 23%) bonded SiC as a new type refractory material,is used widely.The applying temperature is 1400C.It has better thermal stability,thermal shock,which is better than plain refractory material and recrystallization SiC.It also has antioxidation,high corrosion resistant,wear-resistantance,high bending strength.It can resist corrosion and scouring,be no polluted in molten metal such as AL,Pb,Zn,Cu ect.
The diameter of Si3N4 bonded SiC thermocouple protection tube is Φ20-50mm,length is 1600 mm.It can be usded in high temperature kiln furnace and all kinds of atmosphere.It also can be used in all kinds of melted liquid.
The physical and chemical performance of Si3N4 bonded SiC :
Item | Index |
Compressive strength Mpa | > 120 |
Bending strength Mpa | > 40 |
Vol. density g/cm³ | 2.4 |
Porosity % | 20 |
Thermal conductivity (1200 c) W/Mc | 15 |
Thermal shock 1000c-20c | > 20 times |
Resistivity | 10000 |
Moh's hardness | > 9 |
Specification of Si3N4 bonded SiC thermocouple protection tube:
Diameter mm | Inner dia.mm | Length mm |
Φ20 | 12 | 500-1000 |
Φ25 | 14 | 500-1200 |
Φ30 | 18 | 500-1300 |
Φ40 | 25 | 500-1300 |
Φ45 | 29 | 500-1300 |
Φ50 | 32 | 500-1300 |
Φ60 | 42 | 500-1400 |
Φ70 | 52 | 500-1500 |
Remarks:. | ||
1. It can be made one sealing end,or both open ends | ||
2.The diameter of all kinds of crucible can made Φ70,height 600 mm |
4.Pure Silicon nitride
Item | Index | |
Main component | Si3n4 | |
sintering process | gas pressure sintering | |
Bulk density,g/cm3 | 3.20 | |
coefficient of thermal expansion 10-6/K | 3.20 | |
Young modulus GPa | 300 | |
Hardness | HV | 1400~1500 |
HRA | 89~90 | |
HRC | 78 | |
Bending strength, MPa | 700 | |
Fracture toughness, MPa.m1/2 | 6.0 | |
Max working temperature C | 1000 | |
thermal conductivity | 27 |