China Special for Electronic Equipment Aluminum Nitride Ceramic, Find details about China Aluminum Nitride, Aluminum Nitride Ceramic from Special for Electronic Equipment Aluminum Nitride Ceramic
Material Properties of Aluminum Nitride Substrate/Wafer | |
Property Content | Property Index |
Density(g/cm3) | 3.335 |
Resistance to Thermal Shock | No Cracks |
Thermal conductivity(30°C, W/m.k) | ≥170 |
Linear expansion coefficient (/°C, 5°C/min, 20-300°C) | 2.805×10-6 |
Flexural strength (MPa) | 382.7 |
Volume Resistivity (Ω.cm) | 1.4×1014 |
Dielectric constant(1MHz) | 8.56 |
Chemical Durability (mg/cm2) | 0.97 |
Dielectric strength (KV/mm) | 18.45 |
Surface roughness Ra(μm) | 0.3~0.5 |
Camber (length‰) | ≤2‰ |
Appearance/ Color | Dense/ Dark Gray |