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3" 3inch Si-Doped Gallium Arsenide (GaAs) Wafer at Western Minmetals

China 3" 3inch Si-Doped Gallium Arsenide (GaAs) Wafer at Western Minmetals, Find details about China Gallium Arsenide Substrate, Gallium Arsenic Wafer from 3" 3inch Si-Doped Gallium Arsenide (GaAs) Wafer at Western Minmetals

Model NO.
2′′ 3′′ 4′′ 6′′
Manufacturing Technology
VGF
Material
Gallium Arsenic
Type
Intrinsic Semiconductor
Package
Aluminium Composite
Application
LED, Ld, Optoelectronic, Microelectronic
Brand
WMC
Diameter
50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm
Growth Method
VGF
Thickness
220-350+/-20um
Crystal Orientation
<100>+/-0.5degree
Orientation Flat / Length
16+/-1, 22+/-1 or 32+/-1 mm
Identification Flat / Length
8+/-1, 11+/-1 or 18+/-2 mm
Orientation / Identification Flat Option
Ej, Us or Notch
Resistivity
(0.8-9.0)E(-3) or 1e(-2) - 1e(-3) Ohm.Cm
Hall Mobility
1, 500-3, 000 Cm2/V.S
EPD
5, 000 /Cm2
Trademark
WMC
Transport Package
Wafer Container, Carton Box Outsiude
Specification
2′′3′′4′′
Origin
Chengdu China
HS Code
8541900000

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