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3" 3inch Un-doped Gallium Arsenide (GaAs) Wafer (Substrate) at WMC

China 3" 3inch Un-doped Gallium Arsenide (GaAs) Wafer (Substrate) at WMC, Find details about China Gallium Arsenide substrate, Gallium Arsenic wafer from 3" 3inch Un-doped Gallium Arsenide (GaAs) Wafer (Substrate) at WMC

Model NO.
2′′ 3′′ 4′′ 6′′
Manufacturing Technology
VGF
Material
Gallium Arsenic
Type
Intrinsic Semiconductor
Package
Aluminium Composite
Application
LED, LD, Optoelectronic, Microelectronic
Model
2"3"4"6"
Brand
WMC
Growth Method
VGF
Crystal Orientation
<100>+/-0.5degree or +/-2.0degree
Orientation / Identification Flat Option
EJ, US or Notch
Resistivity
1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
Hall Mobility
5, 000 Cm2/V.S Min
Trademark
WMC
Transport Package
Wafer Container, Carton Box Outsiude
Specification
2"3"4"6"
Origin
Chengdu China
HS Code
8541900000

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