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F45 Series IGBT Higher Power Module

China F45 Series IGBT Higher Power Module, Find details about China IGBT Power Module, Sic IGBT Power Module from F45 Series IGBT Higher Power Module

Model NO.
WGF200B120F45
Model
Wgf200b120f45
Batch Number
2021+
Brand
Cetc
Key Material
Sic
Specification
L106.4*W62mm
Origin
Cn
HS Code
8504409190
Model NO.
WGF200B120F45
Model
Wgf200b120f45
Batch Number
2021+
Brand
Cetc
Key Material
Sic
Specification
L106.4*W62mm
Origin
Cn
HS Code
8504409190
Product Photo:
F45 Series IGBT Higher Power Module

Product parameter :
 
Parametersymbolconditionsvalue
unit
 
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=25ºC1200V
Continuous Collector CurrentICTc=80ºC, Tvjmax=175ºC200A
Peak Collector CurrentICRMtp=1ms400A
Gate-Emitter VoltageVGESTvj=25ºC±20V
Total Power Dissipation (IGBT-inverter) PtotTc=25ºC
Tvjmax=175ºC		1358W



Features
  • Low inductance case
  • Low switching losses
  • Gold plated pin.
  • Isolated baseplate
  • High speed IGBT in NPT technology
  • Vce(sat) with positive temperature coefficient
  • Including ultra fast & soft recovery anti-parallel FWD
  • High short circuit capability(10us)
  • Low inductance module structure
  • Maximum junction temperature 175ºC
Benefits
  • Higher inverter output current for the same frame size
  • Reduced system costs by simplification of the inverter systems
  • Easy and most reliable assembly
  • High inter-connection reliability
  • suitable for press-in & soldering process

Applications

  • High frequency drivers
  • Motor control and drives
  • Solutions for solar energy systems
  • Uninterruptible Power Supply (UPS)
  • Soft switching welding machine
  • AC and DC servo drive amplifier
  • SVG
E63 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 75 A. This is possible through the new IGBT7 technology enabling a higher power density and reduced BoM costs.

Circuit Diagram

F45 Series IGBT Higher Power Module
Package drawing

F45 Series IGBT Higher Power Module

E53 Series  products:
 
ModelVces(V)Ic(T=80)(A)VCE(sat) Tj=125ºCEon+Eof(Tj=125)(mj)Rthjc(KW)
WGL200B60F456002001.4511.020.21
WGL300B60F456003001.4515.010.15
WGL400B60F456004001.4517.960.11
WGL600B60F456006001.4533.250.09
WGF200B60F456002002.813.490.11
WGF300B60F456003002.821.380.10
WGF400B60F456004002.828.50.08
WGL200B65F456502001.4512.020.21
WGL300B65F456503001.4516.010.15
WGL400B65F456504001.4519.230.11
WGL600B65F456506001.4536.350.09
WGL100B120F4512001001.917.480.14
WGL150B120F4512001501.934.200.11
WGL200B120F4512002001.937.050.10
WGL300B120F4512003001.960.600.08
WGL400B120F4512004001.980.750.05
WGL450B120F4512004501.990.100.04



FAQ:
1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.
 

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