China Capsule Version Avalanche Diode Zk200-1000A, Find details about China Capsule Version Avalanche Diode, Avalanche Diode from Capsule Version Avalanche Diode Zk200-1000A
Rectifier diode is a kind of device changing AC to DC and has anode and cathode two sides, widely applicable in fields of high power drive, high power rectifiers, non-conotrollable and half-controllable rectifiers. The disc type rectifier diode is characterized by high mean current, low forward voltage drop and double-side cooling, matching with various air-cooling or water-cooling radiators. At present, the high power diode is up to 10000A and voltage can reach 8500V. The stud type, is a kind of device changing AC to DC and has anode and cathode two sides, widely applicable in fields of battery chargers, converters, power supplies, welding machines & motor controls etc. The stud type rectifier diodes are mainly improved from I.R & Semikron and apart from them, the Russian-style diodes, avalanche diodes are developed successfully,too. The metal stud structure and ceramic-metal stud structure both are available and characterized by high surge current capability. Its current is up to 500A.
Type | VRRM | IF(AV) THS 55ºC | IRRM | VFM/IFM 25ºC | RTH(j-hs) | Tjm | M² | Outline |
V | A | mA | V/A | ºC/W | ºC | KN | ||
ZB200A | 100-5000 | 200 | 16 | 1.8/600 | 0.090 | 150 | 3.3-5.5 | A-2,8,12,15 |
ZB300A | 100-5000 | 300 | 30 | 1.8/900 | 0.065 | 150 | 5.3-10 | A-3,9,16 |
ZB400A | 100-5000 | 400 | 40 | 1.8/1200 | 0.040 | 150 | 10-20 | A-4,10,13,17,18 |
ZB500A | 100-5000 | 500 | 40 | 1.8/1500 | 0.040 | 150 | 10-20 | A-4,10,13,17,18 |
Type | VRRM | IF(AV) THS 55ºC | trr 100ºC | Qrr | IFSM 10ms | IRRM | VFM/IFM 25ºC | RTH(j-hs) | Tjm | M² | Outline |
V | A | μS | μC | KA | mA | V/A | ºC/W | ºC | KN | ||
ZK200A | 100-5000 | 200 | 2 | 70 | 2.7 | 16 | 2.2/600 | 0.090 | 150 | 3.3-5.5 | A-2,8,12,15 |
ZK300A | 100-5000 | 300 | 3 | 100 | 4.1 | 30 | 2.4/900 | 0.065 | 150 | 5.3-10 | A-3,9,16 |
ZK400A | 100-5000 | 400 | 3 | 100 | 5.4 | 40 | 2.4/1200 | 0.040 | 150 | 10-20 | A-4,10,13,17,18 |
ZK500A | 100-5000 | 500 | 3 | 120 | 8 | 40 | 2.4/1800 | 0.033 | 150 | 10-20 | A-4,10,13,17,18 |
ZK800A | 100-5000 | 800 | 3 | 130 | 10 | 40 | 2.6/2400 | 0.033 | 150 | 10-20 | A-5,19 |
ZK1000A | 100-5000 | 1000 | 4 | 150 | 13 | 50 | 2.6/3000 | 0.030 | 150 | 15-20 | A-6,11,14,20 |
Note:
IGT,VGT,IH are test values under 25ºC . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.
I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz,I²t=0.00512TSM(A²S)
When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066,Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm
Gate lead: white or colorless,cathode lead (if necessary): red