DB3/DB4/DB6 DO-35 OUTLINE SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

China DB3/DB4/DB6 DO-35 OUTLINE SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST, Find details about China DO-35 DB3, DO35 DB3 from DB3/DB4/DB6 DO-35 OUTLINE SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

Basic Info.

Model NO.

DB3

Trademark

Specification

Through hole

Origin

China

HS Code

85411000

Model NO.

DB3

Trademark

Specification

Through hole

Origin

China

HS Code

85411000

Product Desciption

SILICON BIDIRECTIONAL DIAC
Electronics Component

Part Number: DB3/DB4/DB6

Major Parameter:

Type	VBO			│+VBO│-│-VBO│	│±△V│	VO	IB	Outline
Type	Min.V	Typ.V	Max.V	V	V	V	μA	Outline
DB3	28	32	36	±3	5	5	10	DO-35
DC34	30	34	38	±3	5	5	10
DB4	35	40	45	±3	5	5	10
DB6	56	60	70	±4	10	5	10

Brand: JF Logo/ JH Logo

Package: DO-35
Manufacturer: Jinan Jingheng Electronics Co., Ltd.

Features:

· The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control and heat control.

· JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate in conjunction with Triacs and SCR's

Application:
Used in lighting field
DB3/DB4/DB6 DO-35 OUTLINE SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST