China Bright Kovar 4j29 Strip 0.4mm*200mm for Stamping IC Framework, Find details about China Kovar Strip, 4j29 Strip from Bright Kovar 4j29 Strip 0.4mm*200mm for Stamping IC Framework
Ni 28,5-29,5% | Fe 51,14-54,5% | C 0.03% | Si 0.3% | Mn 0,4 % | S o 0.015% |
P 0.015% | o 17-18% | Ti 0.1% | Al 0.2% | Cu 0.2% | Cr 0,1 % |
Temperature coefficient of linear expansion αsr ? 10-6 K-1 in the temperature range, ° C | inflection point temperature, ° C No less | Heat treatment regime blanks and samples | ||||||||||
20-80 | 20-100 | 20-300 | 20-400 | 20-450 | 20-500 | 20-800 | ||||||
- | - | 4,6-5,6 | 4,6-5,2 | - | 5,9-6,4 | - | 420 | samples and blanks annealing in hydrogen, a vacuum or protective atmosphere at a temperature (960 ± 20) ° C, holding 1 hr., cooling with the furnace or container to 200 ° C at a rate not exceeding 10 ° C / min | ||||
Property | sintered | HIPed | ||||||||||
Density / g cm3 | 8.0 | 8.35 | ||||||||||
Hardness / HV1 | 160 | 150 | ||||||||||
Youngs Modulus / GPa | 138 | 138 | ||||||||||
reduction of area at fracture / % | 30 | 30 | ||||||||||
yield strength / MPa | 270 | 270 | ||||||||||
thermal conductivity / W/Km | 17 | |||||||||||
Curie Temperature / °C | 435 | |||||||||||
electrical resistivity Ω mm2 / m | 0.49 | |||||||||||
specific heat J/gK | 0.46 | |||||||||||
thermal expansion coefficient/10?6 K?1 (25 - 200 °C) | 5.5 | |||||||||||
(25-300 °C) | 5.1 | |||||||||||
(25-400 °C) | 4.9 | |||||||||||
(25-450 °C) | 5.3 | |||||||||||
(25-500 °C) | 6.2 |