Monocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono Cell

China Monocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono Cell, Find details about China Solar Cell, PV Cell from Monocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono Cell

Busbar
10bb
Power
7.23-7.46W
Type
Perc, Half Cell, Bifacial, Mono-Crystalline
Panel Efficiency
21.9-22.6%
Cell Thickness
175±17.5μm
Interval
17.3mm
Trademark
Flagsun
Transport Package
1200PCS/Carton
Origin
China
HS Code
8541402000
Busbar
10bb
Power
7.23-7.46W
Type
Perc, Half Cell, Bifacial, Mono-Crystalline
Panel Efficiency
21.9-22.6%
Cell Thickness
175±17.5μm
Interval
17.3mm
Trademark
Flagsun
Transport Package
1200PCS/Carton
Origin
China
HS Code
8541402000
Specification
Silicon type sizeFront electrode pattern
Mono-crystalline182*182±0.5Φ247mmten busbar 
 interval :17.3mm
 
Parameter items  SpecificationToleranceUnit
Front surfaceAFinger quantity140--
 BFront busbar width1±0.1mm
 CDistance between busbars17.3±0.15mm
Rare surfaceaBack busbar width1.6±0.3mm
 bDistance between back busbars17.3±0.15mm
 cBack finger quantity160--
 
Eff (%)Efficiency(%)Pmpp(W)Impp(A)Umpp(V)Isc(A)Uoc(V)
22.622.6-22.77.4612.6040.59213.2260.688
22.522.5-22.67.4312.570.59113.1870.687
22.422.4-22.57.412.5350.5913.1470.686
22.322.3-22.47.3612.50.58913.1080.685
22.222.2-22.37.3312.4650.58813.0680.684
22.122.1-22.27.312.430.58713.0280.683
2222.0-22.17.2612.3950.58612.9880.682
2121.9-22.07.2312.360.58512.9480.681
 
Electrical properties 
Voc:-0.3 %/ºCIntensity:1000 W/m²
Isc: +0.06 %/ºCSpectrum:AM1.5G
Monocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono CellMonocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono CellMonocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono Cell
Solar Cell Production Line


Cleaning & Texturing: Wafers are cleaned with industrial soaps and form square-based pyramids also called texture. The texturization helps to reduce the reflection of sunlight. 

Diffusion
: Wafers that have been pre-droped with boron during the casting process are then given a negative(n-type) surface characteristic by diffusing them with a phosphorus source at high temperature, which in turn creats the negative/positive(n-p) junction.

Etching: Phosphorus diffuses not only into the desired wafer surface but also into the side and the opposite surface to form PN. This gives a shunt path between the cell front and rear. Removal of the path around the wafer edge/edge junction isolation is named etching.

PECVD: By PECVD equipment, the wafers are coated with anti-reflection coating(ARC). It's the blue silicion nitride film to reduce reflection and promote absorption of light.

Printing & Heating: it was adopted by printing paste with screen technology to print the electrodes of silicion solar, and form a good ohmic contact.
Testing & Sorting: It means classifying the cells according to their efficiency tested under the simulated sunlight.

Monocrystalline Solar Cells Shingles 5W 7.23W 12V 10bb 9bb Mono Cell