IC GATE DRVR IGBT/ MOSFET ZXGD3009E6TA

China IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA, Find details about China MOSFET, ZXGD3009E6TA from IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

Model NO.
ZXGD3009E6TA
MFG.
DIODES
D/C
17+
Package
SOT23-6
Quality
Genuine New Original
Transport Package
Box
HS Code
8542390000
Model NO.
ZXGD3009E6TA
MFG.
DIODES
D/C
17+
Package
SOT23-6
Quality
Genuine New Original
Transport Package
Box
HS Code
8542390000

Description

ZXGD3009E6TA: MOSFET DRVR 3A 1-OUT High Speed Non-Inv6-Pin SOT-26 T/R 

Package: SOT23-6

Mfr. Part#: ZXGD3009E6TA

Mfr.: DIODES

Datasheet: IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA(e-mail or chat us for PDF file)

ROHS Status: IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

Quality: 100% Original

Warranty: 180 days
 


 

ZXGD3009E6 is a high-speed non-inverting single gate driver for switching MOSFETs. It can transfer up to 2A peak source/sink current into the gate for effective charging and discharging the capacitive load.This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1A into the low gate impedance with just 10mA input from a controller. Also, the turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction problems can be reduced.

Key Features

  • High-gain buffer with typically 1Aoutput from 10mA input
  • Emitter-follower that is rugged to latch-up / shoot-through issues
  • Wide supply voltage to minimize on-losses
  • Separate source and sink outputs for independent control of MOSFET turn-on and turn-off times
  • Optimized pin-out to simplify PCB layout and reduce parasitic trace inductances
  • Near-zero quiescent supply current
  • Totally Lead-Free & Fully RoHS compliant
  • Halogen and Antimony Free. "Green" Device

Company Product Line


IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA







 


IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA


IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA


IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA


Certificates

IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

Product Packing details

IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA



Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

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