RD06HVF1 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter "G" after the lot
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing
more than85% lead.)

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