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for OTDR High Power 850nm Pulsed Laser Diode with RoHS

China for OTDR High Power 850nm Pulsed Laser Diode with RoHS, Find details about China High Output Power PF=120MW, Long Wavelength 850 Nm from for OTDR High Power 850nm Pulsed Laser Diode with RoHS

Model NO.
PLD-F85X-XXXX
Bandwidth
100m
Connector
FC/APC FC/Upc Sc/APC SC/PC LC/Upc
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Specification
0.5m/1m FC/APC SC/APC
Origin
China
Model NO.
PLD-F85X-XXXX
Bandwidth
100m
Connector
FC/APC FC/Upc Sc/APC SC/PC LC/Upc
Trademark
WUHAN SHENGSHI OPTICAL
Transport Package
Antistatic Box
Specification
0.5m/1m FC/APC SC/APC
Origin
China
                                      850nm Pulsed Laser For OTDR

Features
  • High output power Pf = 120mW @ IFP =300mA
  • Long wavelength λC = 850 nm
  • Pulsed Conditions: Pulsed width (PW) = 10 μs, Duty = 1%
  • Multi mode fiber 50um or 62.5um
Applications
This fiber pigtailed pulsed laser is designed to be used as light source in fiber optic test and measurement equipment,such as OTDR System.

Absolute Maximum Ratings
ParameterSymbolMin.Max.Unit
Pulsed Forward CurrentIFP 450mA
Reverse VoltageVR 2V
Reverse Voltage (monitor PD)VRM 30V
Reverse Current (monitor PD)IFPM 2mA
Operating Case TemperatureTC040ºC
Storage TemperatureTstg-4080ºC
Lead Soldering TemperatureTsld 260(10s)ºC
Relative Humidity (noncondensing)RH 85%
 
ParameterSymbolMin.Typ.Max.UnitNotes
Forward VoltageVFP--5VIFP = 300 mA, PW = 10 μs, Duty = 1%
Threshold CurrentIth-1825mA 
Optical Output Power Pf-120-mWIFP =300 mA, PW = 10 μs, Duty = 1%
Fiber Type :MM50 or MM62.5
Center WavelengthλC840850860nmPW = 10 μs, Duty = 1%
Rise Time tr-0.52.0ns10-90%
 tf-0.52.0ns90-10%

for OTDR High Power 850nm Pulsed Laser Diode with RoHS






                  
 

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