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4 Inch Silicon Carbide Wafer

China 4 Inch Silicon Carbide Wafer, Find details about China Silicon, Silicon Wafer from 4 Inch Silicon Carbide Wafer

Model NO.
4 inch Silicon Carbide Wafer
Model
PC817
Batch Number
2010+
Trademark
OEM
Transport Package
Carton
Specification
4inch
Origin
China
HS Code
8541402000
Model NO.
4 inch Silicon Carbide Wafer
Model
PC817
Batch Number
2010+
Trademark
OEM
Transport Package
Carton
Specification
4inch
Origin
China
HS Code
8541402000
4 inch Conductive SiC Wafer Specification
Product
4H-SiC
Grade
Grade I
Grade II
Grade III
polycrystalline areas
None permitted
None permitted
<5%
polytype areas
None permitted
≤20%
20% ~ 50%
Micropipe Density)
< 5micropipes/cm-2
< 30micropipes/cm-2
<100micropipes/cm-2
Total usable area
>95%
>80%
N/A
Diameter
100.0 mm +0/-0.5 mm
Thickness
500 μm ± 25 μm or Customer Specification
Dopant
n type: nitrogen
Primary Flat Orientation)
Perpendicular to <11-20> ± 5.0°
Primary Flat Length
32.5 mm ± 2.0 mm
Secondary Flat Orientation)
90° CW from Primary flat ± 5.0°
Secondary Flat Length)
18.0 mm ± 2.0 mm
On axis Wafer Orientation)
{0001} ± 0.25°
Off axis Wafer Orientation
4.0° toward <11-20> ± 0.5° or Customer Specification
TTV/BOW/Warp
< 5μm / <10μm /< 20μm
Resistivity
0.01~0.03 Ω×cm
Surface Finish
C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification
Double side polish
4 Inch Silicon Carbide Wafer4 Inch Silicon Carbide Wafer4 Inch Silicon Carbide Wafer4 Inch Silicon Carbide Wafer4 Inch Silicon Carbide Wafer4 Inch Silicon Carbide Wafer

 

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