Silicon Hetero Junction Technology (HJT) is based on an  emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned mono silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated.

The cell process is completed by the deposition of transparent conductive oxides that allow for an excellent metallization. The metallization can be done by a standard screen printing which is widely used in industry for the majority of cells or with innovative technologies.

Hetero Junction Technology (HJT) silicon solar cells have  attracted a lot of attention because they can achieve high conversion efficiencies, up to 25%, while using low temperature processing, typically below 250 °C for the complete process. Low processing temperature allows handling of silicon wafers of less than 100 μm thick while maintaining a high yield.

Key features

High Eff and high Voc
Low temperature coefficient 5-8% power output gain
Bifacial structures