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Ra13h8891MB: Silicon, 13W RF Mosfet Amplifier Module, Transistor,

China Ra13h8891MB: Silicon, 13W RF Mosfet Amplifier Module, Transistor,, Find details about China Modules, Silicon RF Power Modules from Ra13h8891MB: Silicon, 13W RF Mosfet Amplifier Module, Transistor,

Model NO.
RA13H8891MB
HS Code
8542330000
Model NO.
RA13H8891MB
HS Code
8542330000
DESCRIPTION
The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
• Enhancement-Mode MOSFET Transistors
• Pout>13W @ VDD=12.5V, VGG=5V, Pin=1mW
• Broadband Frequency Range: 880-915MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA13H8891MB-101 is a RoHS compliant products.
• RoHS compliance is Indicate by the letter "G" after the lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.

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