China Apd Avalanche Photodiode Pin Diode for OTDR, Find details about China Photodiode, OTDR from Apd Avalanche Photodiode Pin Diode for OTDR
APD Avalanche Photodiode Pin diode for OTDR
Features
1.Small Dark Current:ID = 2 nA
2.Small Terminal Capacitance:CT = 0.35 pF at 0.9 VBR
3.High Quantum Efficiency:
η = 90% at λ = 1310 nm, M = 1
η = 77% at λ = 1550 nm, M = 1
4.High Speed Response :fc = 2.5 GHz at M = 10
5.Detecting Area Size:30um
6.Coaxial Module With Single Mode Fiber (SM-9/125)
Applications
Optical Time Domain Reflectometer(OTDR System)
Other Sensing Probe
Optical & Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
Reverse Breakdown Voltage, | VBR | 40 | 45 | 55 | V | ID = 100 μA |
Temperature Coefficient of Reverse Breakdown Voltage1 | δ |
| 0.2 |
| %/°C |
|
Dark Current | ID |
| 5 | 25 | nA | VR = VBR x 0.9 |
Multiplied Dark Current | IDM |
| 1 | 3 | nA | M = 2 to 10 |
Terminal Capacitance | Ct |
| 0.35 |
| pF | VR = VBR x 0.9, f = 1 MHz |
Cut-off Frequency | fC | 2.5 |
|
| GHz | M = 10 |
Quantum Efficiency | η | 76 | 90 |
| % | λ = 1310 nm, M = 1 |
65 | 77 |
| λ = 1550 nm, M = 1 | |||
Responsivity | S | 0.85 | 0.90 |
| A/W | λ = 1310 nm, M = 1 |
0.90 | 0.95 |
| λ = 1550 nm, M = 1 | |||
Multiplication Factor | M | 30 | 40 |
| M | λ = 1310 nm, IPO = 1.0 μw, VR = V (at ID = 1 μA) |
Excess Noise Factor | X |
| 0.7 |
| - | λ = 1310 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz |
F |
| 5 |
| λ = 1550 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz | ||
Optical Return Loss | ORL | 30 |
|
| dB | SMF |