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GaN on Sapphire compound wafer 2
GaN on Sapphire compound wafer 2

GaN on Sapphire compound wafer 2" 4" 6" at Western Minmetals

China GaN on Sapphire compound wafer 2" 4" 6" at Western Minmetals, Find details about China GaN on sapphire, GaN compound from GaN on Sapphire compound wafer 2" 4" 6" at Western Minmetals

Model NO.
2" 4" 6"
Manufacturing Technology
HVPE & MOCVD
Material
Compound Semiconductor
Type
N-type Semiconductor
Application
LED
Model
N-type, semi-insulating
Brand
WMC
Diameter
50.8, 100 150 mm
Crystal Orientation
C-plane (0001)
Resistivity
<0.05 <0.1 <0.5 ohm.cm
Thickness
350um
TTV
10um max
Bow
25um max
EPD
5E8 cm-2 max
Surface Roughness
Front: <=0.2nm, Back: 0.5-1.5um or <=0.2nm
Carrier Concentration
5E17 cm-3 max
Hall Mobility
300 cm2/V.s
Trademark
WMC
Transport Package
single wafer container
Specification
2" 4" 6"
Origin
Chengdu China
HS Code
3818001900

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