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Thick film GaN-Al2O3 compound wafer at Western Minmetals

China Thick film GaN-Al2O3 compound wafer at Western Minmetals, Find details about China GaN on sapphire, GaN compound from Thick film GaN-Al2O3 compound wafer at Western Minmetals

Model NO.
2" 4" 6"
Manufacturing Technology
HVPE & MOCVD
Material
Compound Semiconductor
Type
N-type Semiconductor
Application
LED
Model
N-type, semi-insulating
Brand
WMC
Diameter
50.8, 100 150 mm
Crystal Orientation
C-plane (0001)
Resistivity
<0.05 <0.1 <0.5 ohm.cm
Thickness
350um
TTV
10um max
Bow
25um max
EPD
5E8 cm-2 max
Surface Roughness
Front: <=0.2nm, Back: 0.5-1.5um or <=0.2nm
Carrier Concentration
5E17 cm-3 max
Hall Mobility
300 cm2/V.s
Trademark
WMC
Transport Package
single wafer container
Specification
2" 4" 6"
Origin
Chengdu China
HS Code
3818001900

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