Specifications
1. One-stage MMIC GaAs amplifier chip
2. Low noise microwave tube push-pull circuit
3. Adopt aluminum alloy shell
Performance Characteristics
WF1030L indoor bidirectional building amplifier adopts full GaAs MMIC RF amplifier circuit, with low consumption and good nonlinearity indicators.
WF-8630L indoor bidirectional building amplifier, the forward path adopts SOT-115 packaged CATV dedicated RF module, while the return path adopts low noise microwave tube push-pull circuit.
The ouput level and output equilibrium both adopt continuously adjustable design.
High reliability power pupply and strict lightning protection system.
Adopt aluminium alloy shell, with good heat dissipation performance and nice appearance


Main Technical Performance
1. Forward Path RF indicators
Operating Frequency: 87 ~ 860 MHz. Flatness in Band: ± 0.75 dB.
Return Loss: ≥ 16 dB. Noise Figure: ≤ 10dB.
C/CTB: ≥ 57dB. C/CSO: ≥ 56dB.
Rated Gain: 30 dB(WF-8630L type); Rated Input Level: 72 dB(WF-8630L type);
32 dB(WF-1030L type). 70 dB(WF-1030L type).



Return Path RF indicators

Operating Frequency: 5 ~ 65 MHz. Flatness in Band: ± 0.75 dB.

Rated Gain: 15 dB. Maximum Output Level: ≥ 110 dBμ V.

Return Loss: ≥ 16 dB. Noise Figure: ≤ 12 dB.

Carrier second order intermodulation ratio: ≥ 52dB. (Note: Tested when the output level is 110dBμ V, tested points f1=10MHz, f2=60MHz, f3=f2-f1=50MHz. )
Product Process: