SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

China SI2318CDS-T1-GE3 SI2318CDS mosfet transistor, Find details about China IC, RF IC from SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

Model NO.
SI2318CDS-T1-GE3
Structure
Diffusion
Material
Silicon
MFG.
VISHAY
Quality
Genuine New Original
Package
SOT-23
D/C
18+
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542390000
Model NO.
SI2318CDS-T1-GE3
Structure
Diffusion
Material
Silicon
MFG.
VISHAY
Quality
Genuine New Original
Package
SOT-23
D/C
18+
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542390000

Description

SI2318CDS-T1-GE3:  Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel 

Package: SOT-23

Mfr. Part#: SI2318CDS-T1-GE3

Mfr.: VISHAY

Datasheet: SI2318CDS-T1-GE3 SI2318CDS mosfet transistor(e-mail or chat us for PDF file)

ROHS Status: SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

Quality: 100% Original

Warranty: 180 days
 

 

Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs42 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds340pF @ 20V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 2.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
 

 

Company Product Line


SI2318CDS-T1-GE3 SI2318CDS mosfet transistor







 


SI2318CDS-T1-GE3 SI2318CDS mosfet transistor


SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

SI2318CDS-T1-GE3 SI2318CDS mosfet transistor


SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

SI2318CDS-T1-GE3 SI2318CDS mosfet transistor


Certificates

SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

Product Packing details

SI2318CDS-T1-GE3 SI2318CDS mosfet transistor

 

Why choosing us

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  • 24 Hours service 

 

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