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High Power Transistors Tip36c

China High Power Transistors Tip36c, Find details about China High Power Transistors, Complementary Silicon from High Power Transistors Tip36c

Model NO.
TIP36C
Structure
NPN
Material
Silicon
Transport Package
Box
Specification
TO-247
Origin
Make in China
HS Code
8541290000
Model NO.
TIP36C
Structure
NPN
Material
Silicon
Transport Package
Box
Specification
TO-247
Origin
Make in China
HS Code
8541290000
specifications

The tip36c is a cilicon epitaxial-base NPN transistors in TO-247 plastic package, for general-purpose power amplifier and switching applications.
• 25 A Collector Current
• Low Leakage Current - I CEO = 1.0 mA @ 30 and 60 V
• Excellent DC Gain - h FE = 40 Typ @ 15 A
• High Current Gain Bandwidth Product - (h fe )= 3.0 min @ I C = 1.0 A,
f = 1.0 MHz
Part number:TIP36C 
Brand:ST
Type: Others IC
Package:Tube
1.MAXIMUM RATINGS
Rating SymbolTip36cUnit
Collector-Emitter VoltageV CEO100VVdc
Collector-Bass VoltageV CB100VVdc
Emitter-Bass VoltageV EB5.0Vdc
Colleator Current-Continuous
                             Peak(1)		I C25
40		Adc
Base Current-ContinuousI B5.0Adc
Total  Power Dissipation
@TC=25ºC
Derate above 25ºC		P D125
1.0		Watts
W/ºC
Operating and Storage Junction
Temperature Range		T J , T stg-65 To +150ºC
Unclamped inductive loadE SB90mJ
THERMAL CHARACTERISTICS
CharacteristicSymbolmaxUnit
Thermal Resistance, Junction to CaseR θJC1.0ºC/W
Junction-To-Free-Air Thermal ResistanceR θJA35.7ºC/W

2.ELECTRICAL CHARACTERISTICS (T C = 25ºC unless otherwise noted)
CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(I C = 30 mA, I B = 0)		V CEO(sus)100--Vdc
Collector-Emitter Cutoff Current
(V CE = 30 V, I B = 0)
(V CE = 60 V, I B = 0)
 		I CEO--
--		1.0mA
Collector-Emitter Cutoff Current
(V CE = Rated V CEO , V EB = 0)		I CES--0.7mA
Emitter-Base Cutoff Current
(V EB = 5.0 V, I C = 0)		I EBO--1.0mA
ON CHARACTERISTICS (1)
DC Current Gain
(I C = 1.5 A, V CE = 4.0 V)
(I C = 15 A, V CE = 4.0 V)		h FE25
15		---
75		____
Collector-Emitter Saturation Voltage
(I C = 15 A, I B = 1.5 A)
(I C = 25 A, I B = 5.0 A)		V CE(sat)--
--		1.8
4.0		Vdc
Base-Emitter On Voltage
(I C = 15 A, V CE = 4.0 V)
(I C = 25 A, V CE = 4.0 V)		V BE(on)--
____		2.0
4.0		Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(I C = 1.0 A, V CE = 10 V, f = 1.0 kHz)		h fe25________
Current-Gain - Bandwidth Product
(I C = 1.0 A, V CE = 10 V, f = 1.0 MHz)		f T3.0____MHz

High Power Transistors Tip36c
High Power Transistors Tip36cwhy choose us :
advantage:
1.Produce Range
Yangjiang RUIXIAO Enterprise Co,.Ltd,major in the electronic component , who have wide range of products,
such as IC,resistor , capacitor , mosfet , diodes, module , LED, relay, lcd. pcb board . and so.  the brand involves:SHARP, POWER, , NXP, NS, ON, ST , IR, VISHAY , TOSHIBA, FAIRCHILD,MICROCHIP, ATMEL,EVERYLIGHT all the kinds  of electronic component you need will be find in  here.
2.Scope of application
the product  is widely used in Automotive industry control,new energy industry,Audio,Home appliances equipment,Communication industry.it can  meet the diverse needs of customers
3.service:
with the  "User first, customer first" Company motto, quality assurance ,  economic price , fast Delivery time is our only faith. we will try our best to make every customer to enjoy the  the most flexible,efficient  services.We sincere hope that we can seek the common development and cooperation with  the customer together to achieve a win-win situation.
4, Logistics:
we can send the goods to the customer's country directly by the international logistics.  no matter send by air or by sea. 
we will try our best to let the customer to get the parcel more convenient .
(noted:Not bear  any fee and tax of the transportation cost.)

High Power Transistors Tip36c
 

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