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Insulated Gate Bipolar Transistor IGBT G40n60d to-247

China Insulated Gate Bipolar Transistor IGBT G40n60d to-247, Find details about China IGBT, Insulated Gate Bipolar Transistor from Insulated Gate Bipolar Transistor IGBT G40n60d to-247

Model NO.
G40N60D
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Model NO.
G40N60D
Batch Number
2021
Brand
Wxdh
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Insulated Gate Bipolar Transistor IGBT G40n60d to-247Insulated Gate Bipolar Transistor IGBT G40n60d to-247Insulated Gate Bipolar Transistor IGBT G40n60d to-247Insulated Gate Bipolar Transistor IGBT G40n60d to-247
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES600V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)80A
Collector Current (Tc=100ºC)40A
Pulsed Collector CurrentICM120A
Diode Continuous Forward CurrentIF @TC = 100 °C20A
Diode Maximum Forward CurrentIFM100A
Total DissipationTC=25ºCPD280W
TC=100ºCPD110W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.2V
@ IC =40A and VGE=15V
Mainly used in inverter welding machine, suitable for working frequency < 70kHz.
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G40N60DTO-247G40N60DPb-freeTube300/box
 Insulated Gate Bipolar Transistor IGBT G40n60d to-247

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