MRF151 MACOM
RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performanceat 30 MHz, 50 V:
Output Power - 150 W
Gain - 18 dB (22 dB Typ)
Efficiency - 40% Typical Performance at 175 MHz, 50 V:
Output Power - 150 W
Gain - 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Description and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands
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