China Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126, Find details about China Mosfet, Power Mosfet from Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126
PARAMETER | SYMBOL | VALUE | UNIT | ||
Collector-Base Voltage | VCBD | 40 | V | ||
Collector-Emitter voltage | VCEO | 30 | V | ||
Emitter-Base Current(continuous) | VEBO | 5 | V | ||
Collector current | IC | 3 | A | ||
Collector pulse current (TP < 5ms) | ICM | 6 | A | ||
Total Dissipation | Ta=25ºC | Ptot | 1.25 | W | |
Tc=25ºC | 10 | ||||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Low saturation pressure drop |
Great current characteristics |
Low reverse leakage current |
100% ΔVDS Test |
Applications |
3W audio amplifier output |
Voltage regulator |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHD882 | TO-126 | D882 | Pb-free | bag | 10000/box |
DHD882 | TO-252 | D882 | Pb-free | Braid | 3000/box |