4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET

China 4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET, Find details about China electronic component, electronic components from 4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET

Model NO.
SVF4N60D/F/T/K/M/MJ
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8541290000
Model NO.
SVF4N60D/F/T/K/M/MJ
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8541290000
-Data Sheet
 

* General Description

SVF4N60D/F/T/K/M/MJ  is  an  N-channel  enhancement  mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS  technology.

The improved   planar  stripe   cell   and  the   improved   guard   ring terminal  have  been  especially   tailored  to  minimize  on-state resistance,   provide    superior   switching    performance,   and withstand high energy pulse in the avalanche and commutation mode.  

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


* Features
 

1.4A, 600V, RDS(on)(typ.)=2.0@VGS=10V  
2.Low gate charge  
3.Low Crss 
4.Fast switching 
5.Improved dv/dt capability


 


* Typical application schematic
 

4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET
4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET












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* Specilaze in IC for around 14 years 
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* 1 Year warranty
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Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor



Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor
Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor