China 4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET, Find details about China electronic component, electronic components from 4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET
* General Description
SVF4N60D/F/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
* Features
1. | 4A, 600V, RDS(on)(typ.)=2.0@VGS=10V |
2. | Low gate charge |
3. | Low Crss |
4. | Fast switching |
5. | Improved dv/dt capability |
* Typical application schematic