4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET

China 4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET, Find details about China electronic component, mosfet from 4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET

Model NO.
SVR4N65T/F/M/MJ/D/K
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8542399000
Model NO.
SVR4N65T/F/M/MJ/D/K
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8542399000
-Data Sheet
 

* General Description

SVF4N65T/F/M/MJ/D/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology.

The improved planar stripe celltm and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.



* Features

1. 4A,650V, RDS(on)(typ.)=2.3@VGS=10VLow gate charge
2.Low Crss
3.Fast switching
4.Improved dv/dt capability


 


* Typical application schematic


4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET
4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET





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* Specilaze in IC for around 14 years 
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* 1 Year warranty
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Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor



Notes

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Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor
Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor