China 4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET, Find details about China electronic component, mosfet from 4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET
* General Description
SVF4N65T/F/M/MJ/D/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology.
The improved planar stripe celltm and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
* Features
1. | 4A,650V, RDS(on)(typ.)=2.3@VGS=10VLow gate charge |
2. | Low Crss |
3. | Fast switching |
4. | Improved dv/dt capability |