China Power Field-Effect Transistor Irfb4020pbf Irfb4020 to-220 IR, Find details about China Power Transistor, Transistor from Power Field-Effect Transistor Irfb4020pbf Irfb4020 to-220 IR
Vds - Drain-Source Breakdown Voltage: | 200 V |
Id - Continuous Drain Current: | 18 A |
Rds On - Drain-Source Resistance: | 100 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 100 W |
Channel Mode: | Enhancement |
Configuration: | Single |
Height: | 15.65 mm |
Length: | 10 mm |
Transistor Type: | 1 N-Channel |
Width: | 4.4 mm |