China 35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4, Find details about China IGBT Power Module, Sic IGBT Power Module from 35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4
Parameter | symbol | conditions | value | unit |
Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25ºC | 1200 | V |
Continuous Collector Current | IC | Tc=100ºC | 35 | A |
Peak Collector Current | ICRM | ICRM=2IC | 70 | A |
Gate-Emitter Voltage | VGES | Tvj=25ºC | ±20 | V |
Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25ºC Tvjmax=175ºC | 214 | W |
Model | Vces(V) | Ic(T=80ºC)(A) | VCE(sat) Tj=125ºC | Eon+Eof(Tj=25)(mj) | Rthjc(KW) |
WGL75TL65N3 | 650 | 75 | 1.65 | 5.61 | 0.33 |
WGL100TL65N3 | 650 | 100 | 1.65 | 8.55 | 0.24 |
WGL150TL65N3 | 650 | 150 | 1.65 | 13.4 | 0.17 |
WGL50F120N3 | 1200 | 50 | 1.85 | 9.41 | 0.18 |
WGL75F120N3 | 1200 | 75 | 1.85 | 12.35 | 0.11 |
WGL25P120N3 | 1200 | 25 | 1.85 | 4.56 | 0.68 |
WGL35P120N3 | 1200 | 35 | 1.85 | 6.27 | 0.43 |
WGF100TT120N3 | 1200 | 100 | 1.55 | 10.21 | 0.18 |
WGF150TT120N3 | 1200 | 150 | 1.55 | 14.22 | 0.16 |
WGF200TT120N3 | 1200 | 200 | 1.55 | 18.21 | 0.12 |