35A/ 1200V N3 IGBT Module Replae Infineon Fp35r12W2t4

China 35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4, Find details about China IGBT Power Module, Sic IGBT Power Module from 35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4

Model NO.
WGL35P120N3
Model
Wgl35p120n3
Batch Number
2021+
Brand
Cetc
Key Material
Sic
Specification
L56.8*W48mm
Origin
Cn
HS Code
8504409190
Model NO.
WGL35P120N3
Model
Wgl35p120n3
Batch Number
2021+
Brand
Cetc
Key Material
Sic
Specification
L56.8*W48mm
Origin
Cn
HS Code
8504409190
Product Photo:
35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4

Product parameter :

 
Parametersymbolconditionsvalue
unit
 
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=25ºC1200V
Continuous Collector CurrentICTc=100ºC35A
Peak Collector CurrentICRMICRM=2IC70A
Gate-Emitter VoltageVGESTvj=25ºC±20V
Total Power Dissipation (IGBT-inverter) PtotTc=25ºC
Tvjmax=175ºC
214W



Features
  • Low switching losses
  • Tj max = 175°C
  • Isolated heatsink using DBC technology
  • Low indactance case
  • Low Vce(sat) with positive temperature coefficient
  • Including fast & soft recovery anti-parallel FWD
  • High short circuit capability(10us)
Benefits
  • Higher inverter output current for the same frame size
  • Reduced system costs by simplification of the inverter systems
  • Easy and most reliable assembly
  • High inter-connection reliability
  • suitable for press-in & soldering process

Applications

  • Commercial, construction and agricultural vehicles (CAV)
  • Motor control and drives
  • Solutions for solar energy systems
  • Uninterruptible Power Supply (UPS)
  • Soft switching welding machine
  • AC and DC servo drive amplifier
N3 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, AC and DC servo amplifier; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 200 A. This is possible through the Six pack with NTC PIM in one package    technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4
Package drawing

35A/1200V N3 IGBT Module Replae Infineon Fp35r12W2t4


N2 Series  products:
 
ModelVces(V)Ic(T=80ºC)(A)VCE(sat) Tj=125ºCEon+Eof(Tj=25)(mj)Rthjc(KW)
 
WGL75TL65N3650751.655.610.33
WGL100TL65N36501001.658.550.24
WGL150TL65N36501501.6513.40.17
WGL50F120N31200501.859.410.18
WGL75F120N31200751.8512.350.11
WGL25P120N31200251.854.560.68
WGL35P120N31200351.856.270.43
WGF100TT120N312001001.5510.210.18
WGF150TT120N312001501.5514.220.16
WGF200TT120N312002001.5518.210.12



FAQ:
1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

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