China Txλ C=Rxλ C Bosa and High-Reliability Mqw Dfb Laser Chipsfor OTDR, Find details about China Bosa, Transceiver Module from Txλ C=Rxλ C Bosa and High-Reliability Mqw Dfb Laser Chipsfor OTDR
Parameter | Symbol | Min. | Type. | Max. | Unit |
Reverse voltage(LD) | Vrl | - | - | 2 | V |
Forward Current (LD) | LfL | - | - | 700 | mA |
Reverse voltage (monitor) | Vrl | - | - | 15 | V |
Reverse Current (monitor) | Lrp | - | - | 2 | mA |
Input optical power(APD) | Pin | - | - | -10 | dBm |
Soldering Temperature(<10sec.) | Stemp | - | - | 260 | ºC |
Storage Temperature | Tstg | -40 | - | 85 | ºC |
Operating Temperature | Top | -10 | - | 60 | ºC |
Parameter | Symbol | Min | Typical | Max | Unit | Notes |
1625nm Pulse Laser | ||||||
Output Power | Po | 20 | mW | IFP = 400 mA, PW = 10 μs, Duty = 1% | ||
Threshold Current | Ith | 10 | 15 | mA | ||
Operating Voltage | Vf | 2.5 | 3.0 | V | IFP = 400 mA, PW = 10 μs, Duty = 1% | |
Cent Wavelength | λc | 1625 | 1640 | nm | IFP = 400 mA, PW = 10 μs, Duty = 1% | |
Rise Time | tr | 0.2 | 0.5 | ns | 10-90% | |
Fall Time | tf | 0.2 | 0.5 | ns | 90-10% | |
Spectral Width(RMS) | Δλ | 0.5 | 1 | nm | -20dB | |
1625 APD | ||||||
Operating Wavelength Rang | λ | 1100 | 1700 | nm | ||
Reverse Breakdown Voltage | VBR | 40 | 45 | V | ID = 100 μA | |
Dark Current | ID | 5 | nA | VR = VBR x 0.95 | ||
Bandwidth | BW | 2.5 | GHz | M=10 | ||
Capacitance | C | 0.3 | 0.5 | pF | ||
Responsivity | R | 0.40 | A/W | 1625nm,M=1 | ||
Multiplication Factor | M | 20 | M | 1625nm,Ipo=1.0uw,Vr=(ID<5A) | ||
TX&RX ISO | Iso | 20 | dB | |||
Optical Return Loss | RL | 30 | 40 | dB |