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High Power MOS Field Effect Transistor Ipw60r041p6

China High Power MOS Field Effect Transistor Ipw60r041p6, Find details about China Electronic Component, Integrated Circuit from High Power MOS Field Effect Transistor Ipw60r041p6

Model NO.
IPW60R041P6
ID-Continuous Drain Current
77.5 a
Pd-Power Dissipation
481 W
Model NO.
IPW60R041P6
ID-Continuous Drain Current
77.5 a
Pd-Power Dissipation
481 W
High power MOS field effect transistor IPW60R041P6

 
main feature
 

High Power MOS Field Effect Transistor Ipw60r041p6
 

applications  


products are widely used in drones, digital products, communication systems, led drives, power supplies, chargers, smart homes,
set-top boxes, audio, induction cookers, welding torches, elevators, computers and other electronic and electrical products,
can also design customized ic for customers    

High Power MOS Field Effect Transistor Ipw60r041p6

 


 

packaging and delivery  

 

High Power MOS Field Effect Transistor Ipw60r041p6

 

company information 

1.founded in 1988, the company is a world-renowned integrated circuit (ic) distributor, mainly producing well-known brands of ics, transistors, silicon rectifiers, fets, igbts, and three-terminal constant voltage.

2.we are the exclusive exclusive agent of the "jdp" brand.most of our parts are widely used in automotive, household appliances and industrial appliances and tools.
our products are reliable and durable, backed by years of experience.we export 90% of our products to the world.     

 

High Power MOS Field Effect Transistor Ipw60r041p6

 

certification

the company has been selected by huaqiang electronic network as one of the top ten creditworthy enterprises, ten top quality suppliers and ten major brand enterprises.
with the concept of innovation, efficiency and service, the company has won the trust and support of customers at home and abroad.     

 

High Power MOS Field Effect Transistor Ipw60r041p6

 

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