LLDB3/LLDB4/LLDB6 SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

China LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST, Find details about China SMD DB3, SOD80 DB3 from LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

Model NO.
LLDB3
Trademark
JF
Specification
SMD
Origin
China
HS Code
85411000
Model NO.
LLDB3
Trademark
JF
Specification
SMD
Origin
China
HS Code
85411000
Product Description

SURFACE MOUNT SILICON BIDIRECTIONAL DIAC
Electronics Component

Part Number: LLDB3/LLDB4/LLDB6

Major Parameter:  
 

TypeVBO+VBO│-│-VBO││±△V│VOIBOutline
Min.VTyp.VMax.VμA
DB3283236±35510DO-35
(GLASS)           
DC34303438±35510
DB4354045±35510
DB6566070±410510
LLDB3283236±35510Mini-MELF
(GLASS)          
LLDC34303438±35510
LLDB4354045±35510
LLDB6566070±410510

Brand: JF Logo/ JH Logo

Package: MINIMELF
Manufacturer: Jinan Jingheng Electronics Co., Ltd.

Features:

· The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control and heat control.
· JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate in conjunction with Triacs and SCR's

Application: 
Used in lighting field
LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

Company Profile

LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST
LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST
LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST

LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLASTLLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLASTLLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST
LLDB3/LLDB4/LLDB6  SILICON BIDIRECTIONAL DIAC DIODE FOR BALLAST