China IC SDRAM 256MBIT W9825G6KH-6, Find details about China IC, W9825G6KH-6 from IC SDRAM 256MBIT W9825G6KH-6
W9825G6KH-6: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II
Package: TSOP(II)-54
Mfr. Part#: W9825G6KH-6
Mfr.: WINBOND
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: 180 days
The W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the following speed grades: -5, -5I, -6, -6I, -6L -75 and 75L. The -5/-5I grade parts are compliant to the 200 MHz/CL3 specification (the -5I industrial grade which is guaranteed to support - 40°C ≤ TA ≤ 85°C). The -6/-6I/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade which is guaranteed to support - 40°C ≤ TA ≤ 85°C). The -75/75L is compliant to the 133MHz/CL3 specification. The -6L and 75L parts support self refresh current IDD6 Max. 1.5 mA.
Accesses to the SDRAM are burst oriented. Consecutive memory location is one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time.
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