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1A 600V SVF1N60A/M/MJ/B/D/F/H Power Discrete Device MOSFET

China 1A 600V SVF1N60A/M/MJ/B/D/F/H Power Discrete Device MOSFET, Find details about China electronic component, electronic components from 1A 600V SVF1N60A/M/MJ/B/D/F/H Power Discrete Device MOSFET

Model NO.
SVF1N60A/M/MJ/B/D/F/H
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8541290000
Model NO.
SVF1N60A/M/MJ/B/D/F/H
Color
Black
Trademark
Silan
Specification
AC 85-265V
Origin
China
HS Code
8541290000
-Data Sheet
 

* General Description

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary  F-CellTMstructure  VDMOS  technology.    
The improved   planar  stripe   cell   and  the   improved   guard   ring terminal  have  been  especially  tailored  to minimize  on-state resistance,   provide    superior   switching   performance,   and withstand high energy pulse in the avalanche and commutation mode.  

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


* Features

1.1A,600V,RDS(on)(typ.)=6.8@VGS=10V
2.Low gate charge  
3.Low Crss 
4.Fast switching 
5.Improved dv/dt capability


 


* Typical application schematic
 

1A 600V SVF1N60A/M/MJ/B/D/F/H Power Discrete Device MOSFET








Why choose us?

* Specilaze in IC for around 14 years 
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price 
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from our sales and R&D team




Notes

* The pictures are taken by camera.
* You can contact us for a better price.
* Feel free to contact us if you would like to see other models.

Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor



Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor
Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor

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