155m 850nm Vcsel Tx /1310nm Rx Bosa

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155m 850nm Vcsel Tx /1310nm Rx Bosa

China 155m 850nm Vcsel Tx /1310nm Rx Bosa, Find details about China Laser Diode, Bosa from 155m 850nm Vcsel Tx /1310nm Rx Bosa

Basic Info.

Model NO.

DTB-F31WB-F85WF-2M528P2

Chip

Fp

Trademark

WUHAN SHENGSHI OPTICAL

Transport Package

Antistatic Box

Specification

0.5m/1m FC/APC SC/APC

Origin

China

Model NO.

DTB-F31WB-F85WF-2M528P2

Chip

Fp

Trademark

WUHAN SHENGSHI OPTICAL

Transport Package

Antistatic Box

Specification

0.5m/1m FC/APC SC/APC

Origin

China

Product Desciption

155M 850nm Vcsel TX /1310nm RX BOSA

Features

850nm uncooled VCSEL LD
InGaAs PIN- TIA Receiver With 1310nm WDM Filter integrated

for multi-mode fiber bi-directional transmission

Cross Talk <-45dB, Isolation >35dB
Connector Type: LC, SC,ST,FC, Pigtail etc.
High Output Power , High Sensitivity
RoHS compliant

Applications
For SONET/SDH/ATM equipment interconnect

Absolute maximum ratings

Parameter	Ratings	Unit	Conditions
Storage Temperature	-40~+85	ºC	TSTG
Operating Case Temperature	-20~+70	ºC	TOP
Forward Current(LD)	20	mA	If(LD)
Forward Voltage(LD)	2	V	Vf(LD)
Reverse Current (PD)	2	mA	Ir(PD)
Reverse Voltage (PD)	15	V	Vr(PD)
Soldering Temperature (<10sec.)	260	ºC	Stemp

Optical & Electrical Characteristics
Transmitter

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Threshold Current	Ith		1.5	3	mA	CW
Optical Output Power	Pf	-6		-2	dBm	CW, If=7mA, kink free
Operating Voltage	Vf		1.5	2.5	V	CW
Central Wavelength	λc	840	850	860	nm	CW
Spectral Width	Δλ			2	nm	CW
Rise Time	tr			<300	ps	Ib=Ith, 20~80%
Fall Time	tf			<300	ps	Ib=Ith, 80~20%
PD Monitor Current	Im	100		900	μA	CW, Vr(PD)=3V
Series resistor	Rs			50	Ohm
PD capacitor	Ct			50	pF	Vr(PD)=3V,f=1MHz
Tracking Error	TE	-1.5		1.5	dB	Im = const (@ Po = 0.2 mW, Tc = 25°C) Tc = −10 to +70°C

Receiver

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Peak Wavelength	λp	1260		1360	nm
Power Supply	Vcc		3.3		V
Supply Current	Icc		28	40	mA	no loads
Small-Signal Bandwidth	BW	115	165		MHz
Rise Time/Fall Time(20%~80%)	Tr/tr		0.15	0.3	ns	P=-18, λ=1310nm
Saturation Power	Psat	-3			dBm	λ=1310nm
Sensitivity				-35	dBm	λ=1310nm,PRBS7,ER=10dB, BER=1E-10

155m 850nm Vcsel Tx /1310nm Rx Bosa